DIODO EMISOR DE LUZ EPUB
DIODO EMISOR DE LUZ (LED) design by Dóri Sirály for Prezi LED Led se refiere a un componente optoelectrónico pasivo, más. Companies that are developing LED lighting products need to have an awareness of the wider patent landscape to help them develop, protect and exploit their. Diodo emisor de luz translated from Spanish to English including synonyms, definitions, and related words.
|Published:||24 January 2014|
|PDF File Size:||32.43 Mb|
|ePub File Size:||48.32 Mb|
Working principle[ edit ] The inner workings of an LED, showing circuit top and band diagram bottom A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here i.
- Translate diodo emisor de luz from Spanish to English
- Led - Wikcionario
- DIODO EMISOR DE LUZ (LED) by Joshi De Öz Mc on Prezi
- Navigation menu
This phenomenon is generally called electroluminescencewhich can be defined as diodo emisor de luz emission of light from a semiconductor under the influence of an diodo emisor de luz field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region.
Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes is less than the energy levels of the electrons.
Some portion of the energy must be dissipated to recombine the electrons and the holes. This energy is emitted in the form of heat and light.
The electrons dissipate energy in the form of heat for silicon and germanium diodes but in gallium diodo emisor de luz phosphide GaAsP and gallium phosphide GaP semiconductors, the electrons dissipate energy by emitting photons.
If the semiconductor is translucent, the junction becomes the source of light as it is emitted, thus becoming a light-emitting diode.
However, when the junction is reverse biased, the LED produces no light and—if the potential is great enough, the device is damaged. Technology[ edit ] I-V diagram for a diode. An LED begins to emit light when more than 2 or diodo emisor de luz volts is applied.
Diodo Zener y diodo emisor de luz by Abel Asteroid on Prezi
The reverse bias region uses a different vertical scale from the forward bias region to show that the leakage current is nearly constant with voltage until breakdown occurs.
In forward bias, the current is small but increases exponentially with voltage. Physics[ edit ] The LED consists of a chip of semiconducting material doped with impurities to create a p-n junction.
As in other diodes, current flows easily from the p-side, or anodeto the n-side, or cathode, but not in the reverse direction. Charge-carriers— electrons and holes —flow into the junction from electrodes with different voltages. When an electron meets a hole, it falls into a lower energy level and releases energy in the form of a photon.
The wavelength of the light emitted, and diodo emisor de luz its color, depends on the band gap energy of the materials forming the p-n junction. In silicon or germanium diodes, the electrons and holes usually recombine by a non-radiative transition, which produces no optical emission, because these are indirect band gap materials.
The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light. LED development began with infrared and red devices made with gallium arsenide. Advances in materials diodo emisor de luz have enabled making devices with ever-shorter wavelengths, emitting light in a variety of colors.
LEDs are usually built on an n-type substratewith an electrode attached to the p-type layer deposited on its surface.
P-type substrateswhile less common, occur as well. Refractive index[ edit ] Idealized example of light emission cones in a simple square semiconductor, for a single point-source emission zone. The left illustration is for a translucent wafer, while the right illustration shows the half-cones formed when the bottom layer is opaque.
The light is actually emitted equally in all directions from the point-source, but can only escape perpendicular to the semiconductor's surface and some degrees to the side, which is illustrated by the diodo emisor de luz shapes.
When the critical angle is diodo emisor de luz, photons are reflected internally.